From HPCwire news, Samsung Electronics announced on March 24 the successful development of a single capacity 512GB DDR5 module, using the High-K Metal Gate (HKMG) process, which can provide more than double the performance of DDR4 memory, reaching 7200Mb/s. Samsung said the new memory can be used for supercomputers, The new memory can be used for supercomputers, artificial intelligence operations, data analysis and other fields to ensure performance release.
It is understood that the HKMG technology is currently only used in GDDR6 memory chips, which can use new metal materials as an insulating layer in the chip to reduce leakage current, making energy consumption by 13%. Samsung’s application of this technology in DDR5 memory particles further establishes the brand’s leading position.
In addition, Samsung also utilized TSV silicon through-hole technology to stack 8 layers of 16Gb DRAM chips, thus enabling a maximum capacity of 512GB of DDR5 memory.
Young-Soo Sohn, vice president of Samsung Electronics’ memory division, said, “Samsung is currently the only semiconductor manufacturer in the world that can manufacture memory chips using HKMG technology. With the introduction of this process into DRAM manufacturing, Samsung can provide customers with high-performance, energy-efficient memory solutions to power applications such as medical research, finance, autonomous driving, and smart cities.”
Intel also said that DDR5 memory is at a key node in Cloud Computing centers, network centers, and edge computing as the volume of data in the world continues to grow today. Intel’s team of engineers is working closely with Samsung and other companies to create high-speed, energy-efficient DDR5 memory. Intel’s upcoming Xeon Xeon processor, codenamed “Sapphire Rapids,” will also be compatible with DDR5 memory.
Samsung is reportedly experimenting with different variants of its DDR5 memory prototype and sending samples to customers for testing.
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